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UID:1ef0eb64-3703-4e3f-aa32-a2c3a7c1a272
DTSTAMP:20261028T114037Z
SUMMARY:Atomic-Scale Analysis of Heterogeneous Interfaces: Developing Metri
 cs for Quantum System
DESCRIPTION:<p><strong>IN-PERSON EVENT - REGISTER <a href="https://forms.of
 fice.com/e/JMuXzY9a9f">HERE</a></strong><a href="https://forms.office.com/
 e/JMuXzY9a9f"><strong>&nbsp\;</strong></a>to attend</p>\n<p>By <strong>Dr 
 Rosa E. Diaz</strong>&nbsp\;- Elmore School of Electrical and Computer Eng
 ineering at Purdue University\, Indiana\, USA</p>\n<p style="text-align: j
 ustify\;"><strong>Abstract</strong>: Heterogeneous interfaces in quantum d
 evices often undergo structural and chemical transformations when integrat
 ing dissimilar materials\, leading to various forms of disorder that can i
 mpact their stability and performance. This talk will highlight how atomic
 -resolution scanning transmission electron microscopy (STEM) provides a po
 werful approach to identify\, quantify\, and characterize these interfaces
  at the atomic scale. We will present electron microscopy studies across d
 ifferent interfaces in superconductor-semiconductor systems used for quant
 um computation as well as nitride heterostructures used most commonly in o
 ptoelectronic devices. By leveraging high-resolution imaging\, spectroscop
 y\, and quantitative analysis\, we extract critical interface characterist
 ics such as roughness\, bonding states\, and chemical inhomogeneities\, li
 nking them to fabrication processes and electronic measurements. For examp
 le\, in Al/semiconductor interfaces\, we assess the bonding states of Al t
 o determine the presence of metallic or oxidized species\, providing insig
 hts into oxidation behavior and material stability. Through these investig
 ations\, we demonstrate how atomic-resolution electron microscopy supports
  a metric-driven approach to studying disorder at heterogeneous interfaces
 \, offering useful insights into interface quality. These information can 
 help optimize material growth and fine-tune fabrication processes\, ultima
 tely contributing to the advancement of next-generation devices.</p>\n<p s
 tyle="text-align: justify\;"><strong>Biography</strong>:&nbsp\;Dr. Rosa E.
  Diaz is a Research Professor at the Elmore School of Electrical and Compu
 ter Engineering at Purdue University\, specializing in electron microscopy
  and electronic device metrology. She earned her Ph.D. in Materials Scienc
 e and Engineering from Arizona State University. She has held research pos
 itions at Brookhaven National Laboratory\, the Okinawa Institute of Scienc
 e and Technology\, and Birck Nanotechnology Center at Purdue. Dr. Diaz has
  published over 45 research papers in semiconductors\, quantum materials\,
  catalysis\, and nanotechnology collaborating across disciplines. She is a
 n active member of the Microscopy Society of America\, MRS\, and AAAS\, co
 ntributing to the development of cutting-edge characterization methodologi
 es as well as STEM curriculum for K-12 education and outreach. Through her
  extensive partnerships with academia and industry\, she is actively drivi
 ng innovation in materials characterization techniques for next-generation
  electronic and quantum devices\, ensuring fundamental research translatio
 n into technological advancements.</p>\n<p style="text-align: justify\;">H
 osted by <strong>Dr Sonia Ruiz Raga\, </strong>CSIC Tenured Scientist at<s
 trong>&nbsp\;<a href="/en/nanostructured-materials-for-photovoltaic-energy
 -group">Nanostructured Materials for Photovoltaic Energy</a>&nbsp\;</stron
 g>Group at ICN2.</p>
DTSTART:20250530T120000
DTEND:20250530T215959
LOCATION:ICN2 Seminar Room\, Campus UAB
CATEGORIES:ICN2 Seminars
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