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UID:e465c7b0-9250-4443-8e9e-5bbe3a7d11e3
DTSTAMP:20261028T105904Z
SUMMARY:Epitaxial Growth of Intrinsic Magnetic Topological Insulators. MnBi
 ₂Te₄\, MnSb₂Te₄ and Related Compounds
DESCRIPTION:<p><strong>PhD:&nbsp\;<span class="a_GcMg font-feature-liga-off
  font-feature-clig-off font-feature-calt-off text-decoration-none text-str
 ikethrough-none">Carmen Gómez Carbonell</span></strong></p>\n<p><strong>D
 irector</strong>:</p>\n<p>ICREA Prof. Sergio O. Valenzuela\,&nbsp\;Group L
 eader of the <a href="/en/physics-and-engineering-of-nanodevices-group/ser
 gio-valenzuela">Physics and Engineering of Nanodevices</a>&nbsp\;group at 
 <em>Institut Català de Nanociència i Nanotecnologia</em> (ICN2)</p>\n<p>
 <strong>Short Abstract:&nbsp\;</strong>Intrinsic magnetic topological insu
 lators combine band topology with magnetic order\, offering access to phen
 omena such as the quantum anomalous Hall effect (QAHE). This thesis invest
 igates the molecular beam epitaxy (MBE) growth and characterisation of MnB
 i₂Te₄ and MnSb₂Te₄ thin films\, with emphasis on a digital alloy (
 DA) growth strategy. The DA approach enabled the synthesis of both compoun
 ds\, as well as members of the (MnBi₂Te₄)ₘ(Bi₂Te₃)ₙ homologous
  family\, including MnBi₄Te₇ and MnBi₆Te₁₀. Compared with co-eva
 poration\, DA growth improved Mn incorporation and stoichiometry control\,
  leading to higher-quality films. Structural\, transport and electronic ch
 aracterisation confirmed the magnetic and topological nature of the films.
  Analysis combining HAADF-STEM imaging and multislice simulations revealed
  an antisite defect mechanism in MnBi₂Te₄ and MnSb₂Te₄\, involving
  Bi(Sb) occupation of Mn sites and excess Mn incorporation at Bi(Sb) sites
 . These results provide insights into growth and defect formation mechanis
 ms and establish a basis for optimisation of magnetic topological material
 s.</p>\n<p>REGISTER <a href="https://forms.cloud.microsoft/Pages/ResponseP
 age.aspx?id=7y7ItE2bfUi-qg79NXo6WxH4jECG9S9KmyGb2KoqlQpUQ0FLNFZQOTZaTVg2T1
 k2SjZSNkdZWjk2QiQlQCN0PWcu">HERE</a></p>
DTSTART:20261029T103000
DTEND:20261029T225959
LOCATION:ICN2 Seminar Room
CATEGORIES:ICN2 Theses Defence
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