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UID:487d6f02-b622-4f1c-9321-2b6f80d3c477
DTSTAMP:20261028T122455Z
SUMMARY:Free-standing membranes of antiferroelectric Lead Zirconate (PbZrO
 ₃)
DESCRIPTION:<p style="text-align: left\;">PhD Student<strong>:&nbsp\;Umair 
 Saeed</strong></p>\n<p style="text-align: left\;"><strong>In person Event 
 - Register <a href="https://forms.office.com/e/g0UTKdZZRW">HERE&nbsp\;</a>
 to attend</strong></p>\n<p><span style="color: #333333\;">Directors:<stron
 g>&nbsp\;ICREA Prof. Gustau Catalán\,&nbsp\;<a href="/en/oxide-nanophysic
 s-group">Oxide Nanophysics</a>&nbsp\;</strong>Group Leader\,<strong>&nbsp\
 ;</strong><strong>Dr José Santiso\,&nbsp\;<a href="/en/nanomaterials-grow
 th-unit">Nanomaterials Growth Unit</a>&nbsp\;Leader\, </strong>and&nbsp\;<
 strong>Dr David Pesquera\, </strong>Senior Postdoctoral Researcher at<stro
 ng>&nbsp\;<a href="/en/oxide-nanophysics-group">Oxide Nanophysics</a>&nbsp
 \;Group\,</strong>&nbsp\;ICN2</span></p>\n<p style="text-align: justify\;"
 ><strong>Short Abstract:&nbsp\;</strong>Antiferroelectric materials\, part
 icularly lead zirconate (PbZrO₃\, PZO)\, offer promising functionalities
  for energy storage\, electrocalorics\, actuators\, negative-capacitance d
 evices\, and neuromorphic systems. Yet\, their behavior is challenging to 
 understand due to complex phase competition\, sensitivity to strain\, and 
 the mechanical clamping inherent to epitaxial films. This thesis explores 
 free-standing PZO membranes as a platform to investigate antiferroelectric
  properties without substrate constraints while retaining high crystalline
  quality. By releasing films from their substrates\, new opportunities ari
 se to study intrinsic phase behavior\, switching dynamics\, and strain res
 ponses. The work examines how membrane fabrication\, thickness\, mechanica
 l boundary conditions\, and externally applied or spatially varying strain
 s influence the stability and transformation of polar and antipolar phases
 . Finally\, the multifunctional potential of PZO is assessed through its s
 witching dynamics\, resistive and capacitive responses\, and relevance for
  neuromorphic and low-power electronic devices\, highlighting pathways for
  future antiferroelectric technologies.</p>
DTSTART:20251212T083000
DTEND:20251212T225959
LOCATION:ICN2 Seminar Room\, Campus UAB
CATEGORIES:ICN2 Theses Defence
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