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UID:869a6f75-ada7-4c69-bed4-9aca655d80fe
DTSTAMP:20261028T105918Z
SUMMARY:Unraveling the atomic-scale structure of functional nanomaterials t
 hrough multidimensional STEM
DESCRIPTION:<p><strong>PhD:&nbsp\;<span class="a_GcMg font-feature-liga-off
  font-feature-clig-off font-feature-calt-off text-decoration-none text-str
 ikethrough-none">Helena Rabelo Freitas</span></strong></p>\n<p><strong>Dir
 ectors</strong>:</p>\n<p>ICREA Prof. Jordi Arbiol\,&nbsp\;Group Leader of 
 the <a href="/en/advanced-electron-nanoscopy-group/jordi-arbiol">Advanced 
 Electron Nanoscopy</a>&nbsp\;group at <em>Institut Català de Nanociència
  i Nanotecnologia</em> (ICN2)</p>\n<p>Prof Maria Chiara Spadaro\,&nbsp\;Vi
 siting Professor at ICN2</p>\n<p><strong>Short Abstract:&nbsp\;</strong>Th
 is thesis investigates the nanoscale structural properties of semiconducto
 r materials using advanced scanning transmission electron microscopy (STEM
 ) to understand how strain\, defects\, interfaces\, and compositional vari
 ations influence their functional performance in energy and photonic appli
 cations. High-resolution imaging\, spectroscopy\, and diffraction-based te
 chniques are combined to correlate structural and chemical information acr
 oss multiple length scales. Zn₃P₂ is studied through four complementar
 y investigations\, revealing localized surface oxidation during atmospheri
 c degradation\, polycrystalline growth on graphene driven by nucleation\, 
 defect control through selective area epitaxy\, and temperature-dependent 
 effects of post-growth annealing on defect evolution and optoelectronic pr
 operties. ZnO/ZnS heterostructures are examined to understand strain accom
 modation at graded interfaces\, while GaAs nanostructures are analyzed to 
 identify the structural origin of above-bandgap emission\, excluding strai
 n and polytypism as dominant mechanisms.</p>\n<p>Overall\, this work demon
 strates that advanced STEM methodologies establish direct relationships be
 tween atomic-scale structure and material functionality\, providing insigh
 ts for optimizing future semiconductor materials.</p>\n<p>REGISTER <a href
 ="https://forms.cloud.microsoft/Pages/ResponsePage.aspx?id=7y7ItE2bfUi-qg7
 9NXo6WxH4jECG9S9KmyGb2KoqlQpURTNSQlE1UVdXVjBGT1BZUUxCVUY1OVRYVCQlQCN0PWcu"
 >HERE</a></p>
DTSTART:20261021T073000
DTEND:20261021T215959
LOCATION:ICN2 Seminar Room
CATEGORIES:ICN2 Theses Defence
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