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DTSTAMP:20261028T114046Z
SUMMARY:Advanced TEM studies of earth-abundant materials for next-generatio
 n sustainable energy technologies
DESCRIPTION:<p><strong>PhD: Francesco Salutari</strong></p>\n<p><strong>Dir
 ectors</strong>:</p>\n<p>ICREA Prof. Jordi Arbiol\,&nbsp\;Group Leader of 
 the <a href="/en/advanced-electron-nanoscopy-group/jordi-arbiol">Advanced 
 Electron Nanoscopy</a>&nbsp\;group at <em>Institut Català de Nanociència
  i Nanotecnologia</em> (ICN2)</p>\n<p>Prof Maria Chiara Spadaro\,&nbsp\;Vi
 siting Professor at ICN2&nbsp\;</p>\n<p><strong>Short Abstract:&nbsp\;</st
 rong>This thesis presents a detailed TEM study of earth-abundant materials
 \, primarily Zn<sub>3</sub>P<sub>2</sub> and SnSe\, for photovoltaic and t
 hermoelectric applications\, respectively. We begin by studying Zn<sub>3</
 sub>P<sub>2</sub> grown epitaxially on InP substrates by metal-organic vap
 or-phase epitaxy (MOVPE)\, both in the form of nanowires and thin films. R
 esults from structural and compositional characterization position MOVPE a
 s a viable alternative to molecular beam epitaxy (MBE) for the scalable pr
 oduction of Zn<sub>3</sub>P<sub>2</sub>-based photovoltaic devices. Next\,
  we address the structural characterization of extended intrinsic defects 
 across a broad set of MBE- and MOCVD-grown Zn<sub>3</sub>P<sub>2</sub> sam
 ples. We show that defect-free material is unattainable through convention
 al growth\, albeit DFT calculations evidence an almost unperturbed optoele
 ctronic response in relation to intrinsic defects. Finally\, we investigat
 e the dielectric response and band gap of polycrystalline SnSe doped with 
 Na for thermoelectric applications via valence EELS. We find band gap narr
 owing at grain boundaries in the presence of Na.</p>\n<p>REGISTER <a href=
 "https://forms.cloud.microsoft/Pages/ResponsePage.aspx?id=7y7ItE2bfUi-qg79
 NXo6WxH4jECG9S9KmyGb2KoqlQpUNEZKN0VOSjk5MTlOOTZPV0FHMklPVzNLNCQlQCN0PWcu">
 HERE</a></p>
DTSTART:20261021T123000
DTEND:20261021T215959
LOCATION:ICN2 Seminar Room
CATEGORIES:ICN2 Theses Defence
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