Effect of the annealing on the power factor of un-doped cold-pressed SnSe
Morales Ferreiro J.O., Diaz-Droguett D.E., Celentano D., Reparaz J.S., Sotomayor Torres C.M., Ganguli S., Luo T. Applied Thermal Engineering; 111: 1426 - 1432. 2017. 10.1016/j.applthermaleng.2016.07.198.
Tin Selenide (SnSe), a thermoelectric material of the chalcogenide family, has attracted tremendous interest in the past few years due to its unprecedented thermoelectric figure-of-merit, ZT, of 2.6. In this work we have carried out an experimental study of the impact of annealing on the thermoelectric properties of polycrystalline SnSe formed by cold-pressing un-doped SnSe powders with a Hall carrier concentration of 5.37 × 1017 cm−3. The crystalline structure and morphology of the samples are characterized and properties, including electrical conductivity, Seebeck coefficient and thermal conductivity, are measured. It is found that thermal annealing has a large impact on both the microstructure and the thermoelectric properties. Notably, annealing leads to re-alignment of crystalline domains, increase in Seebeck coefficient by a factor of as much as 3, and increase in the electrical conductivity. A peak ZT of 0.11 was achieved at 772 K which is smaller than un-doped polycrystalline SnSe. © 2016 Elsevier Ltd
Structural, optical, and photoelectrochemical properties of nanosphere-like CdXZn1-XS synthesized by electrochemical route
Dhaygude H.D., Shinde S.K., Dubal D.P., Velhal N.B., Kim D.-Y., Fulari V.J. Ionics; 23 (1): 223 - 231. 2017. 10.1007/s11581-016-1797-8.
Here, we present the effect of different Zn contents on the structural, morphological, and optical properties of CdXZn1-XS thin films deposited by electrodeposition method on stainless steel and indium-doped tin oxide (ITO) glass substrates. Electrosynthesized CdXZn1-XS thin films are characterized by using X-ray diffraction (XRD), UV-Vis spectrophotometer, field emission scanning electron microscope (FE-SEM), and surface wettability analysis. XRD pattern reveals that the CdXZn1-XS thin films are polycrystalline in nature with hexagonal crystal structure. FE-SEM micrograph displays that these CdXZn1-XS thin films exhibit the different sizes of sphere-like nanostructures by varying the X value. The optical absorption study indicates that drastic variation in band gap energy of CdXZn1-XS thin films. In advance photovoltaic measurements, CdXZn1-XS thin films are to be studied by forming the photoelectrochemical (PEC) cell having CdXZn1-XS/0.5 M (Na2SO3)/C configuration. The efficiency values of CdXZn1-XS are found to be 0.2, 0.35, 0.32, 0.25, and 0.23 % respectively at X content. © 2016, Springer-Verlag Berlin Heidelberg.