17 July

Growth mechanisms and properties of semiconductor nanowires at the atomic scale: From VLS to SAG quantum networks

Friday 17 July 2020, 11:00am

ICN2 Seminar Hall, ICN2 Building, UAB


This thesis defence will not be streamed due to confidentiality agreements. Only invited attendees will be allowed into the ICN2 Seminar Room.

PhD: Sara Martí-Sánchez

Director: Prof. Jordi Arbiol, Advanced Electron Nanoscopy Group Leader at ICN2.

Short Abstract: Semiconductor nanowires based on III-V and II-VI binary compounds are appealing candidates to overcome nowadays Si-based technologies due to their superior optical and electronic properties. However, conventionally grown VLS nanowires present certain limitations regarding spontaneous defect formation and functional device integration. In this thesis, we investigate novel nanowire growth strategies from atomic scale (S)TEM-based analyses all correlating the crystalline structure and composition at the atomic scale with their photonic, electronic and quantum properties. Such strategies include reverting the standard polar growth direction, guiding the VLS growth into horizontal assemblies, nanopatterning substrates for nanowire growth in highly scalable approaches and the study of epitaxy in complex tri-crystal hybrid nanowires for Majorana-based quantum computing applications.