Events

10 December

Sustainable Materials and Nanodevices - Forum

Friday 10 December 2021, 12:00pm

ONLINE EVENT - REGISTER HERE SOON

Time: 11:00 am (BST) / 12:00 (CET)

Organised by EPSRC e-Futures Network in the frame of the eFutures “Electronics for Sustainable Societies” Series

Synopsis. As the COP26 is drawing to a conclusion, and with it, an ever-greater impetus towards global net zero by 2050, eFutures as a UKRI funded Network+ is offering its support to the cause through the “Electronics for Sustainable Societies” Series. In this forum, we are honoured to host some of the finest researchers and internationally leading experts in the field of Electronics .There will be seven cutting-edge 10-minute talks, spanning oxide materials, sustainable polymers and nanocomposites, nanowires for green energy, 2D materials for energy harvesting, phononic nanostructures, wide band gap semiconductors and in particular recent innovations in SiC MOSFET that underpins Tesla cars. These talks will be followed by a round-table panel discussion with all speakers. This would address the broad questions of “What’s Next for Materials and Nanodevices” from a sustainability/net zero point of view. 

AGENDA (BST Time) 

11.00-11.05 EPSRC eFutures network & introduction from the Chair, Dr Ivona Z. Mitrovic, University of Liverpool

11.05-11.15 Sustainable oxide materials: efficient materials for storage, generation and transmission, Prof.Judith Driscoll, Cambridge University

11.15-11.25 Sustainable polymers and nanocomposites for energy and biomedical applications, Prof. Biqiong Chen, Queen’s University Belfast

11.25-11.35 High performance green electronics using e-source efficient printing route, Prof. Ravinder Dahiya, Glasgow University

11.35-11.45 GreEnergy: new energy harvesting approaches using 2D materials, Dr Zhenxing Wang, AMO GmbH, Aachen, Germany

11.45 -11.55 Phononic nanostructures beyond Moore, Prof. Clivia M. Sotomayor Torres, Catalan Institute of Nanoscience and Nanotechnology, Spain

11.55-12.05 Towards zero carbon by advancements in wide band gap semiconductor technology, Prof. Mikael Östling, KTH Royal Institute of Technology, Sweden

12.05-12.15 Engineered gate stack for advanced SiC MOSFETs, Prof. Anthony O’Neill, Newcastle University

12.20-12.50 ‘Round Table’ panel discussion (all speakers)

12.50-13.00 Concluding remarks and next steps (Chair)