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Electron Beam Lithography (EBL)

Electron beam lithography (EBL) is a fundamental technique in nanofabrication. It is maskless form of lithography used for the fabrication of micro- and nanostructures.

In EBL, a focused beam of electrons is used to form a designed pattern across a sample covered with electron sensitive thin resist film. Structures with micro- and nanometric dimensions are created in the resist and subsequently transferred to the substrate material by either etching or lift-off processes.

ELPHY Quantum is the most widespread and universal lithography attachment for SEM & FIB. All required functions are fully integrated into one software, from pattern design, exposure parameter management, pattern overlay alignment to step and repeat exposures.

Technical specifications

Manufacturer: Raith GmbH
Model: Elphy Quantum (Inspect F50 FEI SEM based system)

  • High stability Schottky field emission gun
  • HV energy: 500V - 30kV
  • Probe current: 0.6pA to 100nA
  • Fast 6 MHz dual DAC addressing for X and Y main beam deflection (16 bit)
  • Accurate 6 additional multiplying 16-bit DACs for highest precision overlay alignment, multilevel lithography and write field calibration with sub-nm step size control
  • High speed electrostatic beam blanker (50 MHz).
  • True multi user management by user authentication and related specific system setup and parameter administration; Users find their system as they have left it


Equipment funded by:



Associated Groups/Units