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Thursday, 16 June 2022

A study led by ICN2 researchers featured on the cover of a special issue of Advanced Electronic Materials

A scientific article on ferroelectric thin-film-based memories published in 'Advanced Electronic Materials' and authored by current and former members of the ICN2 and the ICMAB has been featured on the cover of a special issue of the journal, titled 'Ferroelectric and Multiferroic Materials'.

The work demonstrates that the maximum speed at which ferroelectric thin film-based memories can be written accelerates with atmospheric humidity – and, conversely, slows down in dry conditions. The domain width as a function of relative humidity follows the behaviour of the water adsorption isotherm, revealing the interplay between water layer thickness and screening.

The paper, highlighted in the special issue of Advance Electron Materials dedicated to ferroelectric and multiferroic materials,  is authored by Dr Irena Spasojevic –who recently completed her PhD at the ICN2—, ICREA Prof. Gustau Catalan, head of the ICN2 Oxide Nanophysics Group, Dr Neus Domingo, former Leader of the ICN2 Advanced AFM Research Platform and currently Group Leader for Functional Atomic Force Microscopy at Oak Ridge National Laboratory (Tennessee, US), and Dr Albert Verdaguer, from ICMAB.

Read more about this research.

The art work on the cover is by Dámaso Torres, graphic designer at the ICN2.