Staff directory Regina Galceran Vercher

Regina Galceran Vercher

Visiting Professor
Universitat de Barcelona (UB)
regina.galceran(ELIMINAR)@icn2.cat
Physics and Engineering of Nanodevices

Publications

2021

  • Control of spin-charge conversion in van der Waals heterostructures

    Galceran R., Tian B., Li J., Bonell F., Jamet M., Vergnaud C., Marty A., García J.H., Sierra J.F., Costache M.V., Roche S., Valenzuela S.O., Manchon A., Zhang X., Schwingenschlögl U. APL Materials; 9 (10, 100901) 2021. 10.1063/5.0054865. IF: 5.096

    The interconversion between spin and charge degrees of freedom offers incredible potential for spintronic devices, opening routes for spin injection, detection, and manipulation alternative to the use of ferromagnets. The understanding and control of such interconversion mechanisms, which rely on spin-orbit coupling, is therefore an exciting prospect. The emergence of van der Waals materials possessing large spin-orbit coupling (such as transition metal dichalcogenides or topological insulators) and/or recently discovered van der Waals layered ferromagnets further extends the possibility of spin-to-charge interconversion to ultrathin spintronic devices. Additionally, they offer abundant room for progress in discovering and analyzing novel spin-charge interconversion phenomena. Modifying the properties of van der Waals materials through proximity effects is an added degree of tunability also under exploration. This Perspective discusses the recent advances toward spin-to-charge interconversion in van der Waals materials. It highlights scientific developments which include techniques for large-scale growth, device physics, and theoretical aspects. © 2021 Author(s).


2020

  • The 2021 quantum materials roadmap

    Giustino F., Lee J.H., Trier F., Bibes M., Winter S.M., Valentí R., Son Y.-W., Taillefer L., Heil C., Figueroa A.I., Plaçais B., Wu Q., Yazyev O.V., Bakkers E.P.A.M., Nygård J., Forn-Díaz P., de Franceschi S., McIver J.W., Foa Torres L.E.F., Low T., Kumar A., Galceran R., Valenzuela S.O., Costache M.V., Manchon A., Kim E.-A., Schleder G.R., Fazzio A., Roche S. JPhys Materials; 3 (4, 042006) 2020. 10.1088/2515-7639/abb74e. IF: 0.000

    In recent years, the notion of ‘Quantum Materials’ has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and coldatom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moiré materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to shaping a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry. We stress that this article is not meant to be a fully comprehensive review but rather an up-to-date snapshot of different areas of research on quantum materials with a minimal number of references focusing on the latest developments. © 2020 The Author(s). Published by IOP Publishing Ltd


2016

  • Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn

    Galceran R., Fina I., Cisneros-Fernández J., Bozzo B., Frontera C., López-Mir L., Deniz H., Park K.-W., Park B.-G., Balcells L., Martí X., Jungwirth T., Martínez B. Scientific Reports; 6 ( 35471) 2016. 10.1038/srep35471. IF: 5.228

    Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Neél temperatures above room temperature exists. In the present manuscript, we persevere in the quest for the limits of how large can anisotropic magnetoresistance be in antiferromagnetic materials with very large spin-orbit coupling. We selected IrMn as a prime example of first-class moment (Mn) and spin-orbit (Ir) combination. Isothermal magnetotransport measurements in an antiferromagnetic-metal(IrMn)/ferromagnetic-insulator thin film bilayer have been performed. The metal/insulator structure with magnetic coupling between both layers allows the measurement of the modulation of the transport properties exclusively in the antiferromagnetic layer. Anisotropic magnetoresistance as large as 0.15% has been found, which is much larger than that for a bare IrMn layer. Interestingly, it has been observed that anisotropic magnetoresistance is strongly influenced by the field cooling conditions, signaling the dependence of the found response on the formation of domains at the magnetic ordering temperature. © 2016 The Author(s).


  • Strain-induced perpendicular magnetic anisotropy in L a2CoMn O6-É thin films and its dependence on film thickness

    Galceran R., López-Mir L., Bozzo B., Cisneros-Fernández J., Santiso J., Balcells L., Frontera C., Martínez B. Physical Review B; 93 (14, 144417) 2016. 10.1103/PhysRevB.93.144417.

    Ferromagnetic insulating La2CoMnO6-É (LCMO) epitaxial thin films grown on top of SrTiO3 (001) substrates present a strong magnetic anisotropy favoring the out-of-plane (OP) orientation of the magnetization with a large anisotropy field (∼70 kOe for film thickness of about 15 nm). Diminishing oxygen off-stoichiometry of the film enhances the anisotropy. We attribute this to the concomitant shrinkage of the OP cell parameter and to the increasing of the tensile strain of the films. Consistently, LCMO films grown on (LaAlO3)0.3(Sr2AlTaO6)0.7 and LaAlO3 substrates (with a larger OP lattice parameter and compressive stress) display in-plane (IP) magnetic anisotropy. Thus, we link the strong magnetic anisotropy observed in LCMO to the film stress: tensile strain favors perpendicular anisotropy, and compressive stress favors IP anisotropy. We also report on the thickness dependence of the magnetic properties. Perpendicular anisotropy, saturation magnetization, and Curie temperature are maintained over a large range of film thickness. © 2016 American Physical Society.


  • Tunneling anisotropic magnetoresistance in La2/3Sr1/3MnO3/LaAlO3/Pt tunnel junctions

    Galceran R., Balcells L., Pomar A., Konstantinović Z., Bagués N., Sandiumenge F., Martínez B. AIP Advances; 6 (4, 045305) 2016. 10.1063/1.4946851. IF: 1.444

    The magnetotransport properties of La2/3Sr1/3MnO3(LSMO)/ LaAlO3(LAO)/Pt tunneling junctions have been analyzed as a function of temperature and magnetic field. The junctions exhibit magnetoresistance (MR) values of about 37%, at H=90 kOe at low temperature. However, the temperature dependence of MR indicates a clear distinct origin than that of conventional colossal MR. In addition, tunneling anisotropic MR (TAMR) values around 4% are found at low temperature and its angular dependence reflects the expected uniaxial anisotropy. The use of TAMR response could be an alternative of much easier technological implementation than conventional MTJs since only one magnetic electrode is required, thus opening the door to the implementation of more versatile devices. However, further studies are required in order to improve the strong temperature dependence at the present stage. © 2016 Author(s).


2015

  • Enhanced conduction and ferromagnetic order at (100)-type twin walls in L a0.7 S r0.3Mn O3 thin films

    Balcells L., Paradinas M., Baguès N., Domingo N., Moreno R., Galceran R., Walls M., Santiso J., Konstantinovic Z., Pomar A., Casanove M.-J., Ocal C., Martínez B., Sandiumenge F. Physical Review B - Condensed Matter and Materials Physics; 92 (7, 075111) 2015. 10.1103/PhysRevB.92.075111. IF: 3.736

    There is increasing evidence supporting the strong potential of twin walls in ferroic materials as distinct, spatially tunable, functional elements in future electronic devices. Here, we report an increase of about one order of magnitude in conductivity and more robust magnetic interactions at (100)-type twin walls in La0.7Sr0.3MnO3 thin films. The nature and microscopic origin of such distinctive behavior is investigated by combining conductive, magnetic, and force modulation scanning force microscopies with transmission electron microscopy techniques. Our analyses indicate that the observed behavior is due to a severe compressive strained state within an ∼1nm slab of material centered at the twin walls, promoting stronger Mn 3d-O2p orbital overlapping leading to a broader bandwidth and enhanced magnetic interactions. © 2015 American Physical Society.