Staff directory Jo Sakai



  • Persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on sapphire (001) in reactive sputtering

    Matsuoka K., Okimura K., Azhan N.H., Zaghrioui M., Sakai J. Journal of Applied Physics; 125 (16, 165304) 2019. 10.1063/1.5068700. IF: 2.328

    We report on the first observation of the persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on Al2O3 (001) substrates by means of conventional rf reactive sputtering under adequate deposition conditions. Spatially resolved micro-Raman spectra clearly showed that (011)-oriented large crystalline grains with the cR-axis parallel to the substrate resulted in the appearance of the M2 phase over a wide temperature range of 30 °C. A close correlation of the appearance range of the M2 phase with the in-plane tensile stress of (011)-oriented grains was revealed by X-ray diffraction. We present a phase diagram for the M1, M2, and R phases in relation to the stress of (011)-oriented grains and temperature. It was shown that (011)-oriented micrometer-sized long grains play a crucial role in the emerging structural phase transition (SPT) via an M2 phase even in a film grown on Al2O3 (001), which is ordinarily reserved for the (020)-oriented VO2 growth. The results shown here will contribute to make clear the conditions for obtaining VO2 films with the appearance of the M2 phase in their SPT process. © 2019 Author(s).

  • Strain-induced resistance change in V2O3 films on piezoelectric ceramic disks

    Sakai J., Bavencoffe M., Negulescu B., Limelette P., Wolfman J., Tateyama A., Funakubo H. Journal of Applied Physics; 125 (11, 115102) 2019. 10.1063/1.5083941. IF: 2.328

    We prepared a stacked structure consisting of a quasi-free-standing functional oxide thin film and a ceramic piezoelectric disk and observed the effect of the piezoelectric disk deformation on the resistance of the thin film. Epitaxial V2O3 films were grown by a pulsed laser deposition method on muscovite mica substrates, peeled off using Scotch tapes, and transferred onto piezoelectric elements. In this V2O3/insulator/top electrode/piezoelectronic disk/bottom electrode structure, the resistance of the V2O3 film displayed a variation of 60% by sweeping the piezoelectronic disk bias. With support from x-ray diffraction measurements under an electric field, a huge gauge factor of 3 × 103 in the V2O3 film was inferred. The sizeable resistance change in the V2O3 layer is ascribed to the piezo-actuated evolution of c/a ratios, which drives the material towards an insulating phase. A memory effect on the resistance, related to the hysteretic displacement of the piezoelectric material, is also presented. © 2019 Author(s).