Precision Ion Polishing System - Gatan PIPS (model 691)
PIPS Specifications: Milling angle: +10º to -10º, each gun independently adjustable Ion beam energy: 1.5keV to 6keV Sample size: 3mm or 2.3mm Rotation speed: variable from 1 to 6rpm Viewing: binocular microscope 40X or 80X Applications Sample preparation equipment
Landing energies: 50 V to 30 kV, continuously adjustable Beam current: 0.6 pA - 22 nA Resolution: 0.8 nm@ 15 kV, 0.9 nm @ 1 kV Beam energy spread below 0.2 eV Detector systems: Secondary electrons: Everhart-Thornley and through-lens (TLD) Back-scattered electrons: TLD and retractable vCD (for BSED at low voltages) Transmitted electrons (STEM): BF, DF and HAADF Sample holder kit including cross-sectional, multi-stub and STEM holders Beam deceleration to enhance low kV performance 5-axis high precision specimen stage 100 mm x 100 mm with piezo control Navigation camera Integrated plasma cleaner...
Acceleration voltages: : 60, 80, 200, 300 kV X-FEG UltiMono: High-brightness Schottky field emitter gun with ultra-stable monochromator and accelerating voltage. Double aberration S-CORR corrector: Corrects up to fifth order aberrations (A5) for all accelerating voltages with enhanced stability, thus providing sub-Angstrom imaging resolution at 60-300kV (below 50 pm in STEM mode at 300KV). Symmetric S-TWIN objective lens with wide-gap pole piece design of 5.4 mm Sample holders: Single tilt (± 40º) Low background double tilt (± 40º) High tilt tomography (± 75º) Detectors: On-axis and Off-axis...
Acceleration voltages: 80, 120, 200 kV Super Twin lens (point resolution: 0.24 nm; lattice resolution: 0.10 nm) Sample holders: single tilt (± 40º) low background Be double tilt (± 40º) and high tilt tomography (± 80º) STEM unit with: Off-axis HAADF detector On-axis BF/DF2/DF4 detector EDAX super ultra-thin window (SUTW) X-ray detector with 136 eV resolution (chemical analysis down to Be) Gatan Imaging Filter (GIF) Quantum SE 963 fitted with a 2k x 2k CCD camera to produce energy filtered images (EFTEM), filtered diffraction patterns and EELS spectra Gatan 2k x 2k US1000P CCD camera for HRTEM...
Ion optics: Ion beam current range: 1 pA – 65 nA Accelerating voltage range: 500 V – 30 kV Max. horizontal field width: 0.7 mm at beam coincidence point Electron optics: Electron beam resolution: At optimum working distance (WD): 0.6 nm at 30 kV STEM 0.7 nm at 1 kV 1.0 nm at 500 V (ICD) At coincident point: 0.6 nm at 15 kV 1.2 nm at 1 kV Electron beam current range: 0.8 pA to 100 nA Accelerating voltage range: 350 V – 30 kV Landing energy range: 20 eV – 30 keV Maximum horizontal field width: 2.3 mm at 4 mm WD Detectors: In-lens SE/BSE detector (TLD-SE, TLD-BSE) In-column SE/BSE detector (ICD)...
