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PhD Student: Linda Sheila Medondjio

Directors: CSIC Prof. Pablo Ordejón, Director and Theory and Simulation Group Leader at ICN2. And Dr Roberta Farris, Postdoctoral Researcher in the Theory and Simulation Group.   

Short Abstract: Ovonic Threshold Switching (OTS) is a nonlinear current-voltage phenomenon observed in certain amorphous materials, particularly chalcogenides like a-GexSe1-x, which show great promise for integrating selectors in advanced 3D phase-change memory arrays. Understanding their structural and electronic properties is essential for effective optimization. This work employs density functional theory (DFT) to model undoped and doped a-GexSe1-x systems (x = 0.4, 0.5, 0.6) and analyze their structural and electronic behavior. The doped systems include Si, As, P, S, and Te at varying concentrations (1–15%). The insights gained into the structural and electronic properties, along with their correlations, provide a strong foundation for optimizing OTS materials, with important implications for advancing memory-switching technologies and enabling their integration into next-generation electronic devices.