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Tuesday, 04 December 2018

ICN2 research on flexoelectricity highlighted in the MRS Bulletin

The articles comment on a paper published in Applied Physics Letters with ICN2 PhD student Pablo Vales-Castro and ICREA Prof. Gustau Catalán, from the ICN2 Oxide Nanophysics Group, as first and last author, respectively. This work suggests that it is unlikely that flexoelectricity causes antiferroelectricity, as was previously hypothesised.

Flexoelectricity has only recently become an active area of experimental research. The MRS Bulletin, one of the most widely recognised and highly respected publications in advanced materials research, highlights a work led from the ICN2 which, according to its authors, shows that the existing hypothesis on the origin of antiferroelectricity as being linked to flexoelectricity is either wrong or more nuanced than previously thought.

The original paper was published in Applied Physics Letters (113, 132903), with Pablo Vales-Castro, PhD student at the ICN2 Oxide Nanophysics Group, as lead author and ICREA Prof. Gustau Catalán, leader of this group, as its last author. The work was made possible through a collaboration with the Institute of Physics at the University of Silesia in Katowice (Poland) and the State Key Laboratory of New Ceramics and Fine Processing at the School of Materials Science and Engineering in Tsinghua University (China).

Information via: https://www.cambridge.org/core/journals/mrs-bulletin/news/flexoelectricity-likely-does-not-drive-antiferroelectric-behavior