Publications

2018

• A Solar Transistor and Photoferroelectric Memory

  Pérez-Tomás A., Lima A., Billon Q., Shirley I., Catalan G., Lira-Cantú M. Advanced Functional Materials; 28 (17, 1707099) 2018. 10.1002/adfm.201707099.

• Flexoelectricity in antiferroelectrics

  Vales-Castro P., Roleder K., Zhao L., Li J.-F., Kajewski D., Catalan G. Applied Physics Letters; 113 (13, 132903) 2018. 10.1063/1.5044724.

• Flexoelectricity in Bones

  Vasquez-Sancho F., Abdollahi A., Damjanovic D., Catalan G. Advanced Materials; 30 (9, 1705316) 2018. 10.1002/adma.201705316.

2017

• Domain wall magnetoresistance in BiFeO3 thin films measured by scanning probe microscopy

  Domingo N., Farokhipoor S., Santiso J., Noheda B., Catalan G. Journal of Physics Condensed Matter; 29 (33, 334003) 2017. 10.1088/1361-648X/aa7a24. IF: 2.678

• Ferroelectrics as Smart Mechanical Materials

  Cordero-Edwards K., Domingo N., Abdollahi A., Sort J., Catalan G. Advanced Materials; 29 (37, 1702210) 2017. 10.1002/adma.201702210. IF: 19.791

• On the persistence of polar domains in ultrathin ferroelectric capacitors

  Zubko P., Lu H., Bark C.-W., Martí X., Santiso J., Eom C.-B., Catalan G., Gruverman A. Journal of Physics Condensed Matter; 29 (28, 284001) 2017. 10.1088/1361-648X/aa73c3. IF: 2.678

2016

• A flexoelectric microelectromechanical system on silicon

  Bhaskar U.K., Banerjee N., Abdollahi A., Wang Z., Schlom D.G., Rijnders G., Catalan G. Nature Nanotechnology; 11 (3): 263 - 266. 2016. 10.1038/nnano.2015.260. IF: 35.267

• Above-Bandgap Photovoltages in Antiferroelectrics

  Pérez-Tomás A., Lira-Cantú M., Catalan G. Advanced Materials; 28 (43): 9644 - 9647. 2016. 10.1002/adma.201603176. IF: 18.960

• Enhanced flexoelectric-like response in oxide semiconductors

  Narvaez J., Vasquez-Sancho F., Catalan G. Nature; 538 (7624): 219 - 221. 2016. 10.1038/nature19761. IF: 38.138

• Ferroelectric Domain Structures in Low-Strain BaTiO3

  Everhardt A.S., Matzen S., Domingo N., Catalan G., Noheda B. Advanced Electronic Materials; 2 (1, 1500214) 2016. 10.1002/aelm.201500214. IF: 0.000

• Flexoelectric MEMS: Towards an electromechanical strain diode

  Bhaskar U.K., Banerjee N., Abdollahi A., Solanas E., Rijnders G., Catalan G. Nanoscale; 8 (3): 1293 - 1298. 2016. 10.1039/c5nr06514c. IF: 7.760

2015

• Dielectric relaxation in YMnO3 single crystals

  Adem U., Mufti N., Nugroho A.A., Catalan G., Noheda B., Palstra T.T.M. Journal of Alloys and Compounds; 638: 228 - 232. 2015. 10.1016/j.jallcom.2015.02.207. IF: 2.999

• Ferroelectrics: Negative capacitance detected

  Catalan G., Jimenez D., Gruverman A. Nature Materials; 14 (2): 137 - 139. 2015. 10.1038/nmat4195. IF: 36.503

• Fracture toughening and toughness asymmetry induced by flexoelectricity

  Abdollahi A., Peco C., Millán D., Arroyo M., Catalan G., Arias I. Physical Review B - Condensed Matter and Materials Physics; 92 (9, 094101) 2015. 10.1103/PhysRevB.92.094101. IF: 3.736

• Giant reversible nanoscale piezoresistance at room temperature in Sr2IrO4 thin films

  Domingo N., López-Mir L., Paradinas M., Holy V., Železný J., Yi D., Suresha S.J., Liu J., Rayan Serrao C., Ramesh R., Ocal C., Martí X., Catalan G. Nanoscale; 7 (8): 3453 - 3459. 2015. 10.1039/c4nr06954d. IF: 7.394

• Large Flexoelectric Anisotropy in Paraelectric Barium Titanate

  Narvaez J., Saremi S., Hong J., Stengel M., Catalan G. Physical Review Letters; 115 (3, 037601) 2015. 10.1103/PhysRevLett.115.037601. IF: 7.512

• Mechanical tuning of LaAlO3/SrTiO3 interface conductivity

  Sharma P., Ryu S., Burton J.D., Paudel T.R., Bark C.W., Huang Z., Ariando, Tsymbal E.Y., Catalan G., Eom C.B., Gruverman A. Nano Letters; 15 (5): 3547 - 3551. 2015. 10.1021/acs.nanolett.5b01021. IF: 13.592

• Nanomechanics of flexoelectric switching

  Očenášek J., Lu H., Bark C.W., Eom C.B., Alcalá J., Catalan G., Gruverman A. Physical Review B - Condensed Matter and Materials Physics; 92 (3, 035417) 2015. 10.1103/PhysRevB.92.035417. IF: 3.736

• Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor

  Pérez-Tomás A., Catalàn G., Fontserè A., Iglesias V., Chen H., Gammon P.M., Jennings M.R., Thomas M., Fisher C.A., Sharma Y.K., Placidi M., Chmielowska M., Chenot S., Porti M., Nafría M., Cordier Y. Nanotechnology; 26 (11, 115203) 2015. 10.1088/0957-4484/26/11/115203. IF: 3.821

• Persistence of ferroelectricity above the Curie temperature at the surface of Pb(Z n1/3 N b2/3) O3-12%PbTi O3

  Domingo N., Bagués N., Santiso J., Catalan G. Physical Review B - Condensed Matter and Materials Physics; 91 (9, 094111) 2015. 10.1103/PhysRevB.91.094111. IF: 3.736

2014

• Origin of the enhanced flexoelectricity of relaxor ferroelectrics

  Narvaez, J.; Catalan, G. Applied Physics Letters; 104 (16) 2014. 10.1063/1.4871686. IF: 3.515

2013

• Flexoelectric effect in solids

  Zubko, P.; Catalan, G.; Tagantsev, A.K. Annual Review of Materials Research; 43: 387 - 421. 2013. 10.1146/annurev-matsci-071312-121634. IF: 16.179

• Local properties of the surface layer(s) of BiFeO3 single crystals

  Domingo, N.; Narvaez, J.; Alexe, M.; Catalan, G. Journal of Applied Physics; 113 2013. 10.1063/1.4801974. IF: 2.210

• Thickness scaling of ferroelastic domains in PbTiO3 films on DyScO3

  Nesterov, O.; Matzen, S.; Magen, C.; Vlooswijk, A.H.G.; Catalan, G.; Noheda, B. Applied Physics Letters; 103 2013. 10.1063/1.4823536. IF: 3.794

2012

• Domain wall nanoelectronics

  Catalan, G.; Seidel, J.; Ramesh, R.; Scott, J.F. Reviews of Modern Physics; 84: 119 - 156. 2012. 10.1103/RevModPhys.84.119.

• Elastic and anelastic relaxations in the relaxor ferroelectric Pb(Mg 1/3Nb 2/3)O 3: I. Strain analysis and a static order parameter

  Carpenter, M.A.; Bryson, J.F.J.; Catalan, G.; Howard, C.J. Journal of Physics Condensed Matter; 24 2012. 10.1088/0953-8984/24/4/045901.

• Elastic and anelastic relaxations in the relaxor ferroelectric Pb(Mg 1/3Nb 2/3)O 3: II. Strainorder parameter coupling and dynamic softening mechanisms

  Carpenter, M.A.; Bryson, J.F.J.; Catalan, G.; Zhang, S.J.; Donnelly, N.J. Journal of Physics Condensed Matter; 24 2012. 10.1088/0953-8984/24/4/045902.

• Magnetotransport at domain walls in BiFeO 3

  He, Q.; Yeh, C.-H.; Yang, J.-C.; Singh-Bhalla, G.; Liang, C.-W.; Chiu, P.-W.; Catalan, G.; Martin, L.W.; Chu, Y.-H.; Scott, J.F.; Ramesh, R. Physical Review Letters; 108 2012. 10.1103/PhysRevLett.108.067203.

• Mechanical Writing of Ferroelectric Polarization

  Lu, H. ; Bark, C.W.; Esque de los Ojos, D.; Alcala, J. ; Eom, C. B.; Catalan, G. ; Gruverman, A. SCIENCE; 336 (6077): 59 - 61. 2012. DOI: 10.1126/science.1218693.

• Structural, spectroscopic, magnetic and electrical characterization of Ca-doped polycrystalline bismuth ferrite, Bi 1xCa xFeO 3x/2 (x0.1)

  Sardar, K.; Hong, J.; Catalan, G.; Biswas, P.K.; Lees, M.R.; Walton, R.I.; Scott, J.F.; Redfern, S.A.T. Journal of Physics Condensed Matter; 24 2012. 10.1088/0953-8984/24/4/045905.

• Surface phase transitions in BiFeO 3 below room temperature

  Jarrier, R.; Marti, X.; Herrero-Albillos, J.; Ferrer, P.; Haumont, R.; Gemeiner, P.; Geneste, G.; Berthet, P.; Schülli, T.; Cevc, P.; Blinc, R.; Wong, S.S.; Park, T.-J.; Alexe, M.; Carpenter, M.A.; Scott, J.F.; Catalan, G.; Dkhil, B. Physical Review B - Condensed Matter and Materials Physics; 85 2012. 10.1103/PhysRevB.85.184104.

2011

• Flexoelectric rotation of polarization in ferroelectric thin films.

  Catalan, G. ; Lubk, A.; Vlooswijk, A. H. G.; Snoeck, E.; Magen, C. ; Janssens, A.; Rispens, G.; Rijnders, G.; Blank, D. H. A.; Noheda, B. Nature Materials; 10: 963. 2011. .

• Skin layer of BiFeO3 single crystals

  Martí, X.; Ferrer, P.; Herrero-Albillos, J.; Narvaez, J.; Holy, V.; Barrett, N.; Alexe, M.; Catalan, G. Physical Review Letters; 106 2011. 10.1103/PhysRevLett.106.236101.

2010

• Comment on "Nanometer resolution piezoresponse force microscopy to study deep submicron ferroelectric and ferroelastic domains" [Appl. Phys. Lett. 94, 162903 (2009)]----NO ES ARTICULO

  Vlooswijk, A.H.G.; Catalan, G.; Noheda, B. Applied Physics Letters; 97 2010. 10.1063/1.3467005.

• Electric-field control of the metal-insulator transition in ultrathin NdNiO3 films

  Scherwitzl, R.; Zubko, P.; Lezama, I.G.; Ono, S.; Morpurgo, A.F.; Catalan, G.; Triscone, J.-M. Advanced Materials; 22: 5517 - 5520. 2010. 10.1002/adma.201003241.

• Landau theory of domain wall magnetoelectricity

  Daraktchiev, M.; Catalan, G.; Scott, J.F. Physical Review B - Condensed Matter and Materials Physics; 81 2010. 10.1103/PhysRevB.81.224118.

• Neutron diffraction study of the BiFeO3 spin cycloid at low temperature

  Herrero-Albillos, J.; Catalan, G.; Rodriguez-Velamazan, J.A.; Viret, M.; Colson, D.; Scott, J.F. Journal of Physics Condensed Matter; 22: 256001 - 256005. 2010. 10.1088/0953-8984/22/25/256001.

• The β-to-γ transition in BiFeO 3: A powder neutron diffraction study

  Arnold, D.C.; Knight, K.S.; Catalan, G.; Redfern, S.A.T.; Scott, J.F.; Lightfoot, P.; Morrison, F.D. Advanced Functional Materials; 20: 2116 - 2123. 2010. 10.1002/adfm.201000118.

• The flexoelectricity of barium and strontium titanates from first principles

  Hong, J.; Catalan, G.; Scott, J.F.; Artacho, E. Journal of Physics Condensed Matter; 22 2010. 10.1088/0953-8984/22/11/112201.

2009

• Domains in Ferroelectric Nanodots

  A. Schilling; D. Byrne; G. Catalan; K. G. Webber; Y. A. Genenko; G. S. Wu; J. F. Scott; J. M. Gregg Nano Letters; 9: 3359. 2009. .

• Effect of chemical substitution on the Néel temperature of multiferroic Bi1¿xCaxFeO3

  G. Catalan; K. Sardar; N. S. Church; J. F. Scott; R. J. Harrison; S. A. T. Redfern Physical Review B; 79: 212415. 2009. 10.1103/PhysRevB.79.212415.

• Effect of wall thickness on the ferroelastic domain size of BaTiO3

  G. Catalan; I. Lukyanchuk; A. Schilling; J. M. Gregg; J. F. Scott Journal of Materials Science; 44: 5307. 2009. 10.1007/s10853-009-3554-0.

• Elastic and electrical anomalies at low-temperature phase transitions in BiFeO3

  S. A. T. Redfern; Can Wang; J. W. Hong; G. Catalan; J. F. Scott Journal of Physics Condensed Matter; 20: 452205. 2009. 10.1088/0953-8984/20/45/452205.

• Epitaxial TbMnO3 thin films on SrTiO3 substrates: a structural study

  C. J. M. Daumont; D. Mannix; S. Venkatesan; G. Catalan; D. Rubi; B. J. Kooi; J. Th. M. De Hosson; B. Noheda Journal of Physics Condensed Matter; 21: 182001. 2009. 10.1088/0953-8984/21/18/182001.

• Origin of ferroelastic domains in free-standing single-crystal ferroelectric films

  I. A. Luk¿yanchuk; A. Schilling; J.M. Gregg; G. Catalan; J.F. Scott Physical Review B; 79: 144111. 2009. 10.1103/PhysRevB.79.144111.

• Physics and applications of BiFeO3

  G. Catalan; J. F. Scott Advanced Materials; 21: 2463 - 2485. 2009. 10.1002/adma.200802849.

2008

• Conduction at domain walls in oxide multiferroics

  J. Seidel; L. W. Martin; Q. He; Q. Zhan; Y.-H. Chu; A. Rother; M. E. Hawkridge; P. Maksymovych; P. Yu; M. Gajek; N. Balke; S. V. Kalinin; S. Gemming; H. Lichte; F. Wang; G. Catalan; J. F. Scott; N. A. Spaldin; J. Orenstein; R. Ramesh Nature Materials; 8: 229 - 234. 2008. 10.1038/nmat2373.

• Conformal oxide coating of carbon nanotubes

  S. Kawasaki; G. Catalan; H. J. Fan; M. M. Saad; J. M. Gregg; M. A. Correa-Duarte; J. Rybczynski; F. D. Morrison; T. Tatsuta; O. Tsuji; and J. F. Scott Applied Physics Letters; 92 (5): 53109. 2008. 10.1063/1.2841710.

• Fractal walls and domain size scaling in thin films of multiferroic BiFeO3

  G. Catalan; H. Béa; S. Fusil; M. Bibes; P. Paruch; A. Barthélémy; and J. F. Scott Physical Review Letters; 100: 27602. 2008. 10.1103/PhysRevLett.100.027602.

• Landau Theory of Multiferroic Domain Walls

  M. Daraktchiev; G. Catalan; J. F. Scott Ferroelectrics; 375: 122 - 131. 2008. 10.1080/00150190802437969.

• Progress in perovskite nickelate research

  G. Catalan Phase Transitions; 81: 729. 2008. 10.1080/01411590801992463.

• ß phase and ¿-ß metal-insulator transition in multiferroic BiFeO3

  R. Palai; R. S. Katiyar; H. Schmid; P. Tissot; S. J. Clark; J. Robertson; S. A. Redfern; G. Catalan; J. F. Scott Physical Review B - Condensed Matter and Materials Physics; 77: 14110. 2008. 10.1103/PhysRevB.77.014110.

• Solution-process coating of vertical ZnO nanowires with ferroelectrics

  S. Kawasaki; H. J. Fan; G. Catalan; F. D. Morrison; T. Tatsuta; O. Tsuji; J. F Scott Nanotechnology; 19: 375302. 2008. 10.1088/0957-4484/19/37/375302.