Staff directory Aitor Lopeandia Fernández

Aitor Lopeandia Fernández

UAB Senior Researcher
Thermal Properties of Nanoscale Materials



  • Magneto-Ionics in Single-Layer Transition Metal Nitrides

    De Rojas J., Salguero J., Ibrahim F., Chshiev M., Quintana A., Lopeandia A., Liedke M.O., Butterling M., Hirschmann E., Wagner A., Abad L., Costa-Krämer J.L., Menéndez E., Sort J. ACS Applied Materials and Interfaces; 13 (26): 30826 - 30834. 2021. 10.1021/acsami.1c06138. IF: 9.229

    Magneto-ionics allows for tunable control of magnetism by voltage-driven transport of ions, traditionally oxygen or lithium and, more recently, hydrogen, fluorine, or nitrogen. Here, magneto-ionic effects in single-layer iron nitride films are demonstrated, and their performance is evaluated at room temperature and compared with previously studied cobalt nitrides. Iron nitrides require increased activation energy and, under high bias, exhibit more modest rates of magneto-ionic motion than cobalt nitrides. Ab initio calculations reveal that, based on the atomic bonding strength, the critical field required to induce nitrogen-ion motion is higher in iron nitrides (≈6.6 V nm-1) than in cobalt nitrides (≈5.3 V nm-1). Nonetheless, under large bias (i.e., well above the magneto-ionic onset and, thus, when magneto-ionics is fully activated), iron nitride films exhibit enhanced coercivity and larger generated saturation magnetization, surpassing many of the features of cobalt nitrides. The microstructural effects responsible for these enhanced magneto-ionic effects are discussed. These results open up the potential integration of magneto-ionics in existing nitride semiconductor materials in view of advanced memory system architectures. © 2021 American Chemical Society. All rights reserved.


  • Voltage-driven motion of nitrogen ions: a new paradigm for magneto-ionics

    de Rojas J., Quintana A., Lopeandía A., Salguero J., Muñiz B., Ibrahim F., Chshiev M., Nicolenco A., Liedke M.O., Butterling M., Wagner A., Sireus V., Abad L., Jensen C.J., Liu K., Nogués J., Costa-Krämer J.L., Menéndez E., Sort J. Nature Communications; 11 (1, 5871) 2020. 10.1038/s41467-020-19758-x. IF: 12.121

    Magneto-ionics, understood as voltage-driven ion transport in magnetic materials, has largely relied on controlled migration of oxygen ions. Here, we demonstrate room-temperature voltage-driven nitrogen transport (i.e., nitrogen magneto-ionics) by electrolyte-gating of a CoN film. Nitrogen magneto-ionics in CoN is compared to oxygen magneto-ionics in Co3O4. Both materials are nanocrystalline (face-centered cubic structure) and show reversible voltage-driven ON-OFF ferromagnetism. In contrast to oxygen, nitrogen transport occurs uniformly creating a plane-wave-like migration front, without assistance of diffusion channels. Remarkably, nitrogen magneto-ionics requires lower threshold voltages and exhibits enhanced rates and cyclability. This is due to the lower activation energy for ion diffusion and the lower electronegativity of nitrogen compared to oxygen. These results may open new avenues in applications such as brain-inspired computing or iontronics in general. © 2020, The Author(s).