Staff directory Sharin Maria Thomas

Sharin Maria Thomas

Doctoral Student
FPI SO 2021
Novel Energy-Oriented Materials



  • High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon

    Sharma Y.K., Li F., Jennings M.R., Fisher C.A., Pérez-Tomás A., Thomas S., Hamilton D.P., Russell S.A.O., Mawby P.A. Journal of Electronic Materials; 44 (11): 4167 - 4174. 2015. 10.1007/s11664-015-3949-4. IF: 1.798

    In a novel approach, high temperatures (1200–1400°C) were used to oxidize cubic silicon carbide (3C-SiC) grown on silicon substrate. High-temperature oxidation does not significantly affect 3C-SiC doping concentration, 3C-SiC structural composition, or the final morphology of the SiO2 layer, which remains unaffected even at 1400°C (the melting point of silicon is 1414°C). Metal-oxide-semiconductor capacitors (MOS-C) and lateral channel metal-oxide-semiconductor field-effect-transistors (MOSFET) were fabricated by use of the high-temperature oxidation process to study 3C-SiC/SiO2 interfaces. Unlike 4H-SiC MOSFET, there is no extra benefit of increasing the oxidation temperature from 1200°C to 1400°C. All the MOSFET resulted in a maximum field-effect mobility of approximately 70 cm2/V s. © 2015, The Minerals, Metals & Materials Society.