Staff directory
Chenglin Wang
Fellowship Doctoral Student
Chinese Scholarship Council (CSC)
Jiangnan University
chenglin.wang(ELIMINAR)@icn2.cat
Thermal Properties of Nanoscale Materials
Publications
2015
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Resonant tunnelling features in a suspended silicon nanowire single-hole transistor
Llobet J., Krali E., Wang C., Arbiol J., Jones M.E., Pérez-Murano F., Durrani Z.A.K. Applied Physics Letters; 107 (22, 223501) 2015. 10.1063/1.4936757. IF: 3.302
Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole-acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations. © 2015 AIP Publishing LLC.