Advanced Electronic Materials and Devices

Group Leader: Jose Antonio Garrido

Jose Antonio Garrido

ICREA Research Professor and Vice Director

joseantonio.garrido@icn2.cat

Group Leader

Jose A. Garrido is an ICREA Research Professor and leader of the ICN2 Advanced Electronic Materials and Devices Group, which explores novel electronic materials, such as graphene and other 2D materials, and their potential in electronic and bioelectronic applications. He also acts as ICN2 Vice Director supporting the Direction of the center in its institutional role.

He received his Master’s and PhD degrees in Telecommunication Engineering from the Universidad Politécnica de Madrid in 1996 and 2000, respectively. From 2001 to 2004 he worked as a postdoc at the Walter Schottky Institute, Technische Universität München (Germany). He obtained his habilitation in experimental physics at this university in 2010 and from 2011 to 2015 held a lecturer (privatdozent) position at its department of physics. In 2015 Prof. Garrido joined the ICN2.

Prof. Garrido is co-leader of the Graphene Flagship Biomedical Technologies work package, coordinating 14 teams from different countries to develop a new generation of neural interfaces based on graphene technologies. In addition, he is the coordinator of the European project BrainCom, in which 10 institutions from 6 countries participate in the development of a brain implant that allows verbal communication in patients with aphasia. He is also the coordinator of the i-VISION project funded by La Caixa Foundation, where 5 institutions join forces in the development of a retinal implant.

He is also founder of the ICN2 spin-off InBrain Neuroelectronics, established on December 2019, where he is currently Chief Scientific Officer.

Publications

2020

  • Distortion-Free Sensing of Neural Activity Using Graphene Transistors

    Garcia-Cortadella R., Masvidal-Codina E., De la Cruz J.M., Schäfer N., Schwesig G., Jeschke C., Martinez-Aguilar J., Sanchez-Vives M.V., Villa R., Illa X., Sirota A., Guimerà A., Garrido J.A. Small; 16 (16, 1906640) 2020. 10.1002/smll.201906640. IF: 11.459

  • Effect of channel thickness on noise in organic electrochemical transistors

    Polyravas A.G., Schaefer N., Curto V.F., Calia A.B., Guimera-Brunet A., Garrido J.A., Malliaras G.G. Applied Physics Letters; 117 (7, 073302) 2020. 10.1063/5.0019693. IF: 3.597

  • Improved metal-graphene contacts for low-noise, high-density microtransistor arrays for neural sensing

    Schaefer N., Garcia-Cortadella R., Calia A.B., Mavredakis N., Illa X., Masvidal-Codina E., Cruz J.D.L., Corro E.D., Rodríguez L., Prats-Alfonso E., Bousquet J., Martínez-Aguilar J., Pérez-Marín A.P., Hébert C., Villa R., Jiménez D., Guimerà-Brunet A., Garrido J.A. Carbon; 161: 647 - 655. 2020. 10.1016/j.carbon.2020.01.066. IF: 8.821

  • Low-frequency noise parameter extraction method for single-layer graphene FETs

    Mavredakis N., Wei W., Pallecchi E., Vignaud D., Happy H., Cortadella R.G., Schaefer N., Calia A.B., Garrido J.A., Jimenez D. IEEE Transactions on Electron Devices; 67 (5, 9042866): 2093 - 2099. 2020. 10.1109/TED.2020.2978215. IF: 2.913

  • Multiplexed neural sensor array of graphene solution-gated field-effect transistors

    Schaefer N., Garcia-Cortadella R., Martínez-Aguilar J., Schwesig G., Illa X., Moya Lara A., Santiago S., Hébert C., Guirado G., Villa R., Sirota A., Guimerà-Brunet A., Garrido J.A. 2D Materials; 7 (2, 025046) 2020. 10.1088/2053-1583/ab7976. IF: 7.140

  • Photocurrent spectroscopy of in-plane surface conductive diamond homostructures

    Simon P., Beck P., Rathi A., Stutzmann M., Garrido J.A. Physical Review B; 101 (20, 205306) 2020. 10.1103/PhysRevB.101.205306. IF: 3.575

  • Production and processing of graphene and related materials

    Backes C., Abdelkader A.M., Alonso C., Andrieux-Ledier A., Arenal R., Azpeitia J., Balakrishnan N., Banszerus L., Barjon J., Bartali R., Bellani S., Berger C., Berger R., Ortega M.M.B., Bernard C., Beton P.H., Beyer A., Bianco A., Bøggild P., Bonaccorso F., Barin G.B., Botas C., Bueno R.A., Carriazo D., Castellanos-Gomez A., Christian M., Ciesielski A., Ciuk T., Cole M.T., Coleman J., Coletti C., Crema L., Cun H., Dasler D., De Fazio D., Díez N., Drieschner S., Duesberg G.S., Fasel R., Feng X., Fina A., Forti S., Galiotis C., Garberoglio G., García J.M., Garrido J.A., Gibertini M., Gölzhäuser A., Gómez J., Greber T., Hauke F., Hemmi A., Hernandez-Rodriguez I., Hirsch A., Hodge S.A., Huttel Y., Jepsen P.U., Jimenez I., Kaiser U., Kaplas T., Kim H., Kis A., Papagelis K., Kostarelos K., Krajewska A., Lee K., Li C., Lipsanen H., Liscio A., Lohe M.R., Loiseau A., Lombardi L., López M.F., Martin O., Martín C., Martínez L., Martin-Gago J.A., Martínez J.I., Marzari N., Mayoral A., McManus J., Melucci M., Méndez J., Merino C., Merino P., Meyer A.P., Miniussi E., Miseikis V., Mishra N., Morandi V., Munuera C., Muñoz R., Nolan H., Ortolani L., Ott A.K., Palacio I., Palermo V., Parthenios J., Paste 2D Materials; 7 (2, 022001) 2020. 10.1088/2053-1583/ab1e0a. IF: 7.140

  • Switchless multiplexing of graphene active sensor arrays for brain mapping

    Garcia-Cortadella R., Schäfer N., Cisneros-Fernandez J., Ré L., Illa X., Schwesig G., Moya A., Santiago S., Guirado G., Villa R., Sirota A., Serra-Graells F., Garrido J.A., Guimerà-Brunet A. Nano Letters; 20 (5): 3528 - 3537. 2020. 10.1021/acs.nanolett.0c00467. IF: 11.238

2019

2018

2017

2016

2015

  • Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy

    Schuster F., Hetzl M., Weiszer S., Garrido J.A., De La Mata M., Magen C., Arbiol J., Stutzmann M. Nano Letters; 15 (3): 1773 - 1779. 2015. 10.1021/nl504446r. IF: 13.592

  • Role of grain boundaries in tailoring electronic properties of polycrystalline graphene by chemical functionalization

    Seifert M., Vargas J.E.B., Bobinger M., Sachsenhauser M., Cummings A.W., Roche S., Garrido J.A. 2D Materials; 2 (2, 024008) 2015. 10.1088/2053-1583/2/2/024008. IF: 0.000

  • Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

    Ferrari A.C., Bonaccorso F., Fal'ko V., Novoselov K.S., Roche S., Bøggild P., Borini S., Koppens F.H.L., Palermo V., Pugno N., Garrido J.A., Sordan R., Bianco A., Ballerini L., Prato M., Lidorikis E., Kivioja J., Marinelli C., Ryhänen T., Morpurgo A., Coleman J.N., Nicolosi V., Colombo L., Fert A., Garcia-Hernandez M., Bachtold A., Schneider G.F., Guinea F., Dekker C., Barbone M., Sun Z., Galiotis C., Grigorenko A.N., Konstantatos G., Kis A., Katsnelson M., Vandersypen L., Loiseau A., Morandi V., Neumaier D., Treossi E., Pellegrini V., Polini M., Tredicucci A., Williams G.M., Hee Hong B., Ahn J.-H., Min Kim J., Zirath H., Van Wees B.J., Van Der Zant H., Occhipinti L., Di Matteo A., Kinloch I.A., Seyller T., Quesnel E., Feng X., Teo K., Rupesinghe N., Hakonen P., Neil S.R.T., Tannock Q., Löfwander T., Kinaret J. Nanoscale; 7 (11): 4598 - 4810. 2015. 10.1039/c4nr01600a. IF: 7.394