Publications

2018

• Flexible Graphene Solution-Gated Field-Effect Transistors: Efficient Transducers for Micro-Electrocorticography

  Hébert C., Masvidal-Codina E., Suarez-Perez A., Calia A.B., Piret G., Garcia-Cortadella R., Illa X., Del Corro Garcia E., De la Cruz Sanchez J.M., Casals D.V., Prats-Alfonso E., Bousquet J., Godignon P., Yvert B., Villa R., Sanchez-Vives M.V., Guimerà-Brunet A., Garrido J.A. Advanced Functional Materials; 28 (12, 1703976) 2018. 10.1002/adfm.201703976.

• Lipid Monolayer Formation and Lipid Exchange Monitored by a Graphene Field-Effect Transistor

  Blaschke B.M., Böhm P., Drieschner S., Nickel B., Garrido J.A. Langmuir; 34 (14): 4224 - 4233. 2018. 10.1021/acs.langmuir.8b00162.

• Photocurrent generation of biohybrid systems based on bacterial reaction centers and graphene electrodes

  Csiki R., Drieschner S., Lyuleeva A., Cattani-Scholz A., Stutzmann M., Garrido J.A. Diamond and Related Materials; 89: 286 - 292. 2018. 10.1016/j.diamond.2018.09.005.

• Single-layer graphene modulates neuronal communication and augments membrane ion currents

  Pampaloni N.P., Lottner M., Giugliano M., Matruglio A., D’Amico F., Prato M., Garrido J.A., Ballerini L., Scaini D. Nature Nanotechnology; 13 (8): 755 - 764. 2018. 10.1038/s41565-018-0163-6.

• Understanding the bias dependence of low frequency noise in single layer graphene FETs

  Mavredakis N., Garcia Cortadella R., Bonaccini Calia A., Garrido J.A., Jiménez D. Nanoscale; 10 (31): 14947 - 14956. 2018. 10.1039/c8nr04939d.

• Uniformly coated highly porous graphene/MnO2 foams for flexible asymmetric supercapacitors

  Drieschner S., Seckendorff M.V., Corro E.D., Wohlketzetter J., Blaschke B.M., Stutzmann M., Garrido J.A. Nanotechnology; 29 (22, 225402) 2018. 10.1088/1361-6528/aab4c2.

2017

• Electrochemical characterization of GaN surface states

  Winnerl A., Garrido J.A., Stutzmann M. Journal of Applied Physics; 122 (4, 045302) 2017. 10.1063/1.4995429. IF: 2.068

• Frequency response of electrolyte-gated graphene electrodes and transistors

  Drieschner S., Guimerà A., Cortadella R.G., Viana D., Makrygiannis E., Blaschke B.M., Vieten J., Garrido J.A. Journal of Physics D: Applied Physics; 50 (9, 095304) 2017. 10.1088/1361-6463/aa5443. IF: 2.588

• GaN surface states investigated by electrochemical studies

  Winnerl A., Garrido J.A., Stutzmann M. Applied Physics Letters; 110 (10, 101602) 2017. 10.1063/1.4977947. IF: 3.411

• Graphene in the Design and Engineering of Next-Generation Neural Interfaces

  Kostarelos K., Vincent M., Hebert C., Garrido J.A. Advanced Materials; 29 (42, 1700909) 2017. 10.1002/adma.201700909. IF: 19.791

• Mapping brain activity with flexible graphene micro-transistors

  Blaschke B.M., Tort-Colet N., Guimerà-Brunet A., Weinert J., Rousseau L., Heimann A., Drieschner S., Kempski O., Villa R., Sanchez-Vives M.V., Garrido J.A. 2D Materials; 4 (2, 025040) 2017. 10.1088/2053-1583/aa5eff. IF: 6.937

• Protecting a Diamond Quantum Memory by Charge State Control

  Pfender M., Aslam N., Simon P., Antonov D., Thiering G., Burk S., Fávaro De Oliveira F., Denisenko A., Fedder H., Meijer J., Garrido J.A., Gali A., Teraji T., Isoya J., Doherty M.W., Alkauskas A., Gallo A., Grüneis A., Neumann P., Wrachtrup J. Nano Letters; 17 (10): 5931 - 5937. 2017. 10.1021/acs.nanolett.7b01796. IF: 12.712

2016

• Flexible graphene transistors for recording cell action potentials

  Blaschke B.M., Lottner M., Drieschner S., Calia A.B., Stoiber K., Rousseau L., Lissourges G., Garrido J.A. 2D Materials; 3 (2, 025007) 2016. 10.1088/2053-1583/3/2/025007. IF: 9.611

• High surface area graphene foams by chemical vapor deposition

  Drieschner S., Weber M., Wohlketzetter J., Vieten J., Makrygiannis E., Blaschke B.M., Morandi V., Colombo L., Bonaccorso F., Garrido J.A. 2D Materials; 3 (4, 045013) 2016. 10.1088/2053-1583/3/4/045013. IF: 9.611

• Suppression of Photoanodic Surface Oxidation of n-Type 6H-SiC Electrodes in Aqueous Electrolytes

  Sachsenhauser M., Walczak K., Hampel P.A., Stutzmann M., Sharp I.D., Garrido J.A. Langmuir; 32 (6): 1637 - 1644. 2016. 10.1021/acs.langmuir.5b04376. IF: 3.993

• Surface State Mediated Electron Transfer Across the N-Type SiC/Electrolyte Interface

  Sachsenhauser M., Sharp I.D., Stutzmann M., Garrido J.A. Journal of Physical Chemistry C; 120 (12): 6524 - 6533. 2016. 10.1021/acs.jpcc.5b11569. IF: 4.509

• α,ω -dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors

  Schamoni H., Noever S., Nickel B., Stutzmann M., Garrido J.A. Applied Physics Letters; 108 (7, 073301) 2016. 10.1063/1.4942407. IF: 3.142

2015

• Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy

  Schuster F., Hetzl M., Weiszer S., Garrido J.A., De La Mata M., Magen C., Arbiol J., Stutzmann M. Nano Letters; 15 (3): 1773 - 1779. 2015. 10.1021/nl504446r. IF: 13.592

• Role of grain boundaries in tailoring electronic properties of polycrystalline graphene by chemical functionalization

  Seifert M., Vargas J.E.B., Bobinger M., Sachsenhauser M., Cummings A.W., Roche S., Garrido J.A. 2D Materials; 2 (2, 024008) 2015. 10.1088/2053-1583/2/2/024008. IF: 0.000

• Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

  Ferrari A.C., Bonaccorso F., Fal'ko V., Novoselov K.S., Roche S., Bøggild P., Borini S., Koppens F.H.L., Palermo V., Pugno N., Garrido J.A., Sordan R., Bianco A., Ballerini L., Prato M., Lidorikis E., Kivioja J., Marinelli C., Ryhänen T., Morpurgo A., Coleman J.N., Nicolosi V., Colombo L., Fert A., Garcia-Hernandez M., Bachtold A., Schneider G.F., Guinea F., Dekker C., Barbone M., Sun Z., Galiotis C., Grigorenko A.N., Konstantatos G., Kis A., Katsnelson M., Vandersypen L., Loiseau A., Morandi V., Neumaier D., Treossi E., Pellegrini V., Polini M., Tredicucci A., Williams G.M., Hee Hong B., Ahn J.-H., Min Kim J., Zirath H., Van Wees B.J., Van Der Zant H., Occhipinti L., Di Matteo A., Kinloch I.A., Seyller T., Quesnel E., Feng X., Teo K., Rupesinghe N., Hakonen P., Neil S.R.T., Tannock Q., Löfwander T., Kinaret J. Nanoscale; 7 (11): 4598 - 4810. 2015. 10.1039/c4nr01600a. IF: 7.394