Nanomaterials Growth Unit

Unit Leader: José Santiso

Overview

  • Pulsed laser deposition of epitaxial thin films and characterisation of different materials (mainly oxides), looking at strain and relaxation mechanisms, and the microstructural and functional properties of ultrathin films (oxide ionic conducting, thermoelectric, ferroelectric, ferromagnetic, metal-insulating transitions, transparent conducting, etc.)

  • MOCVD growth of 2D layers of transition metal dichalcogenides

  • Structural characterisation by RHEED and advanced XRD, and high temperature electronic transport properties. Surface composition segregation and its effect on oxygen surface exchange kinetics and ageing phenomena

  • Fundamental aspects of interfacial phenomena in layered oxide materials and multilayers for their use as components in ionic and protonic solid oxide fuel cells (SOFCs)

Our unit produces films by means of a pulsed laser deposition technique, and works in close and frequent collaboration with many ICN2 research groups, as well as with external collaborators. Our unit carries out preliminary structural characterisation, primarily by X-ray diffraction.

We are also involved in the development of advanced methods for the characterisation by X-ray diffraction of epitaxial thin films. These include in-plane diffraction, GISAXS analysis, as well as 3D reciprocal space mapping. This microstructure research is complemented with HRTEM characterisation.

We are particularly interested in surface and interfacial oxygen exchange kinetics. For this purpose we have developed a time-resolved XRD technique that monitors the subtle chemical expansion produced in transition metal oxide thin films when changing their oxygen stoichiometry. We aim to perform in-situ and in-operando characterisation by XRD in different soli state electrochemical devices.

In 2017 we have also continued to develop a thin film MOCVD process for the growth of high-quality ultrathin transition metal dichalcogenides, starting with MoS2, in collaboration with the ICN2 group led by Prof. José A. Garrido. We have plans to scale this process up for 2” wafers.

Unit Leader

José Santiso

CSIC Tenured Scientist

Dr. José Santiso earned his degree in Physics at the Universitat Autònoma de Barcelona (UAB) in 1988, later obtaining his PhD from the University of Barcelona (UB) in 1993. After his doctoral studies, he worked as a visiting scientist at Cambridge University (UK) from 1994 to 1996.

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