Direct Write Laser Lithography

In maskless lithography, the radiation that is used to expose a photosensitive emulsion (or photoresist) is not projected from, or transmitted through, a photomask. Instead, most commonly, the radiation is focused to a narrow beam. The beam is then used to directly write the image into the photoresist, one or more pixels at a time.

A key advantage of maskless lithography is the ability to change lithography patterns from one run to the next, without incurring the cost of generating a new photomask. This may prove useful for double patterning. Maskless lithography is most commonly used for making photomasks.

Direct laser writing is a very popular form of optical maskless lithography, which offers flexibility, ease of use, and cost effectiveness in R&D processing. This equipment offers rapid patterning at micrometre resolutions, and offers a compromise between performance and cost when working with feature sizes of approximately 1um or greater.

Technical specifications

Manufacturer: Kloé

Model: Delise 250

 
• Light source: 365nm UV Laser

• Compatible with standard photoresists (AZ, SU8, Shipley)

• Substrate sizes: from 2x2mm up to 4” wafers

• Minimum linewidth: 1um

• Alignment accuracy: 1um

• Three writing modes: vectorial, scanning or a combination of both

• The system accepts GDSII, CIF and DXF formats

The Direct Write Laser Lithography has received funds from the CENanoTech project. In turn, the CENanoTech projectThe CENanoTech project (ref.: 2015 FEDER/S-16) is funded through the call for the development of R&D infrastructures launched by the Regional Ministry of Economy and Knowledge, of the Generalitat de Catalunya, with funding received from the European Regional Development Fund. The project has also been co-funded by the Severo Ochoa Programme granted by the Spanish Ministry of Economy, Industry and Competitiveness.